IndiumV3, Main, Repository, bibRecord, 004467

Development of SiGe Arrays for Visible-Near IR Imaging Applications

Identifieur interne : 004467 ( Main/Repository ); précédent : 004466; suivant : 004468

Development of SiGe Arrays for Visible-Near IR Imaging Applications

Auteurs : RBID : Pascal:11-0308406

Descripteurs français

Pascal (Inist)
- Traitement signal, Détecteur rayonnement, Matrice plan focal, Matrice détecteur, Détecteur IR, Imagerie, Télédétection, Propriété optique, Température ambiante, Dépendance température, Composé ternaire, Gallium Arséniure, Indium Arséniure, Matériau capteur, Silicium, As Ga In, InGaAs, HgCdTe, 0130C, 0757K.
Wicri :
- concept : Télédétection.

English descriptors

KwdEn :
- Ambient temperature, Dectector arrays, Focal plane arrays, Gallium Arsenides, Imagery, Indium Arsenides, Infrared detectors, Optical properties, Radiation detectors, Remote sensing, Sensor materials, Signal processing, Silicon, Temperature dependence, Ternary compounds.

Abstract

SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with other Silicon-based technology for defense and Commercial Applications.

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Pascal:11-0308406

Le document en format XML

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<author><name sortKey="Sood, Ashok K" uniqKey="Sood A">Ashok K. Sood</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Magnolia Optical Technologies Inc., 52-B Cummings Park</s1>
<s2>Woburn, MA 01801</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<wicri:noRegion>Woburn, MA 01801</wicri:noRegion>
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<author><name sortKey="Richwine, Robert A" uniqKey="Richwine R">Robert A. Richwine</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Magnolia Optical Technologies Inc., 52-B Cummings Park</s1>
<s2>Woburn, MA 01801</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<wicri:noRegion>Woburn, MA 01801</wicri:noRegion>
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<author><name sortKey="Puri, Yash R" uniqKey="Puri Y">Yash R. Puri</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Magnolia Optical Technologies Inc., 52-B Cummings Park</s1>
<s2>Woburn, MA 01801</s2>
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<author><name sortKey="Dilello, Nicole" uniqKey="Dilello N">Nicole Dilello</name>
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<author><name sortKey="Hoyt, Judy L" uniqKey="Hoyt J">Judy L. Hoyt</name>
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<author><name sortKey="Dhar, Nibir" uniqKey="Dhar N">Nibir Dhar</name>
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<author><name sortKey="Balcerak, Raymond S" uniqKey="Balcerak R">Raymond S. Balcerak</name>
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<author><name sortKey="Bramhall, Thomas G" uniqKey="Bramhall T">Thomas G. Bramhall</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>DARPA Programs Office, US Army, AMSRD</s1>
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<term>Dectector arrays</term>
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<term>Gallium Arsenides</term>
<term>Imagery</term>
<term>Indium Arsenides</term>
<term>Infrared detectors</term>
<term>Optical properties</term>
<term>Radiation detectors</term>
<term>Remote sensing</term>
<term>Sensor materials</term>
<term>Signal processing</term>
<term>Silicon</term>
<term>Temperature dependence</term>
<term>Ternary compounds</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Traitement signal</term>
<term>Détecteur rayonnement</term>
<term>Matrice plan focal</term>
<term>Matrice détecteur</term>
<term>Détecteur IR</term>
<term>Imagerie</term>
<term>Télédétection</term>
<term>Propriété optique</term>
<term>Température ambiante</term>
<term>Dépendance température</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Matériau capteur</term>
<term>Silicium</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>HgCdTe</term>
<term>0130C</term>
<term>0757K</term>
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<front><div type="abstract" xml:lang="en">SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with other Silicon-based technology for defense and Commercial Applications.</div>
</front>
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<fA09 i1="01" i2="1" l="ENG"><s1>Detectors and imaging devices : infrared, focal plane, single photon</s1>
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<fA11 i1="01" i2="1"><s1>SOOD (Ashok K.)</s1>
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<fC01 i1="01" l="ENG"><s0>SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with other Silicon-based technology for defense and Commercial Applications.</s0>
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<s5>50</s5>
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<s5>51</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
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<s5>52</s5>
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<s5>61</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>61</s5>
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<s4>INC</s4>
<s5>75</s5>
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<s5>83</s5>
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<s4>INC</s4>
<s5>84</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>85</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>0757K</s0>
<s4>INC</s4>
<s5>86</s5>
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<fN44 i1="01"><s1>OTO</s1>
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<s3>San Diego CA USA</s3>
<s4>2010</s4>
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Development of SiGe Arrays for Visible-Near IR Imaging Applications

Development of SiGe Arrays for Visible-Near IR Imaging Applications

Descripteurs français

English descriptors

Abstract

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